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Original file line number | Diff line number | Diff line change |
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# XS_INPUT=xs_bug4.gds | ||
# XS_CUT=-8,16;12,16 | ||
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# Prepare input layers | ||
layer_TRENCH = layer("2/0") | ||
layer_IMPLANT = layer("3/0") | ||
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substrate = bulk | ||
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# First epitaxial layer | ||
epi = deposit(0.5) | ||
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# Second epitaxial layer | ||
epi2 = deposit(0.5) | ||
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# TRENCH | ||
# etch substrate on mask with thickness 0.7µm and angle 30° | ||
mask(layer_TRENCH).etch(0.7, :taper => 30, :into => [substrate, epi, epi2]) | ||
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# IMPLANT | ||
# create an implant by growing the mask into the substrate material and both epitaxial layers. | ||
implant=mask(layer_IMPLANT).grow(0.2, 0.05, :mode => :round, :into => [substrate, epi, epi2]) | ||
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# finally output all result material to the target layout | ||
output("1/0", substrate) | ||
output("2/0", epi) | ||
output("3/0", epi2) | ||
output("6/0", implant) |